| PART |
Description |
Maker |
| MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
| MAPL-000822-002PP |
LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| MXR9745T1 MXR9745RT1 |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTFA212002E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PXFC192207FHV3R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
